2N3391 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
2N3391A ,Leaded Small Signal Transistor General Purpose
2N3391A ,Leaded Small Signal Transistor General Purpose
2N3392 ,Leaded Small Signal Transistor General Purpose
2N3392 ,Leaded Small Signal Transistor General Purpose
2N3392 ,Leaded Small Signal Transistor General Purpose
2SC2352 ,NPN SILICON TRANSISTORFEATURES . Low Cre. : 0.4 pF TYP., (0.204MAX.)
q High conversion gain. : 15 dB TYP.
I A
I Excell ..
2SC2360 ,Si NPN planar. UHF amplifier.PANASONIC INI)L/ELEKfSEhIy 7EC I) 'E‘IBEEzSH [1003155 L r#595229 Er. Bl-l s 2SC23602SC2360' U CCI V ..
2SC2360 ,Si NPN planar. UHF amplifier.Features. atiPGrytit,'ivxo/High power gain (PG)q 1'iFtrhitt NF 7yr0fla,,?Low NFq Tr t '7- F AGC (tt ..
2SC2360 ,Si NPN planar. UHF amplifier.Absolute Maximum Ratings (Ta = 25 "C)-'-T'r-'-r-r,-,''" .Item Symbol Value Unit-'--'--it--C-':----C ..
2SC2362 ,High-Voltage Low-Noise Amp ApplicationsAbsolute Maximum Ratings at Ta=25°CCollector to Base VoltageCollector to Emitter VoltageEmitter to ..
2SC2362-K ,High-Voltage Low-Noise Amp ApplicationsOrderiné number: EN 5725No.572D( ):2SA1016,1016K
2N3391
NPN General Purpose Amplifier
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3390 / 3391/A / 3392 / 3393 PD Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C Thermal Resistance, Junction to Case 83.3 R °C/W θJC Thermal Resistance, Junction to Ambient 200 R °C/W θJA 1997 3390-93, Rev B
