2N3055A ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS32N3055A MJ15015 MJ15016200 2.8T = 25 °CJT = 150 °CJ2.410070250-55°CI = 1 A 4 A 8 A30 C1.62025°C1. ..
2N3055H ,Transistor Silicon Power NPNMAXIMUM RATINGS COMPLEMENTARY SILICON60 VÎRating Symbol Value Unit115 WÎÎCollector−Emitter Voltage ..
2N3114 , Small Signal Transistors
2N3117 ,Leaded Small Signal Transistor General Purposeapplications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junc ..
2N3133 ,Conductor Products, Inc. - PNP SILICON EPITAXIAL TRANSISTORS
2N3134 ,Conductor Products, Inc. - PNP SILICON EPITAXIAL TRANSISTORS
2SC2333 ,PNP SILICON POWER TRANSISTOR(switching regulator,DC-DC converter and ultrasonic appliance)FEATURES 0 High speed switching. _ Sri 18121131“ 4.9 MAX
. O . . . .
0 Low collector saturation v ..
2SC2334 ,Silicon transistorDATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-S ..
2SC2334. ,Silicon transistorDATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-S ..
2SC2335 ,SWITCHING SERIES NPN POWER TRANSISTORS(NPN)DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPE ..
2SC2336 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2SC2336A ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B
, 2SA1006,1006A,1006B/2SC2336,2336A,23368
PNP/NPNI. 5 ..
2N3055A-MJ15016
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
Complementary Silicon
High-Power T ransistors.. PowerBase� complementary transistors designed for high
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc–to–dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055. Current–Gain — Bandwidth–Product @ IC = 1.0 Adc = 0.8 MHz (Min) – NPN
= 2.2 MHz (Min) – PNP Safe Operating Area — Rated to 60 V and 120 V , Respectively
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
*Indicates JEDEC Registered Data. (2N3055A)
*ON Semiconductor Preferred Device
