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Partno	Mfg	Dc	Qty	Available	Descript
2N3055	IR	N/a	3	avai	COMPLEMENTARY SILICON POWER TRANSISTORS
2N3055H	TOSH	N/a	10	avai	Transistor Silicon Power NPN

2N3055H ,Transistor Silicon Power NPNMAXIMUM RATINGS COMPLEMENTARY SILICON60 VÎRating Symbol Value Unit115 WÎÎCollector−Emitter Voltage ..
2N3114 , Small Signal Transistors
2N3117 ,Leaded Small Signal Transistor General Purposeapplications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junc ..
2N3133 ,Conductor Products, Inc. - PNP SILICON EPITAXIAL TRANSISTORS
2N3134 ,Conductor Products, Inc. - PNP SILICON EPITAXIAL TRANSISTORS
2N3209 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (Tamb = 25 tty unless otherwise specified)“, Symbol Test Conditions ..
2SC2333 ,PNP SILICON POWER TRANSISTOR(switching regulator,DC-DC converter and ultrasonic appliance)FEATURES 0 High speed switching. _ Sri 18121131“ 4.9 MAX . O . . . . 0 Low collector saturation v ..
2SC2334 ,Silicon transistorDATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-S ..
2SC2334. ,Silicon transistorDATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-S ..
2SC2335 ,SWITCHING SERIES NPN POWER TRANSISTORS(NPN)DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPE ..
2SC2336 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B , 2SA1006,1006A,1006B/2SC2336,2336A,23368 PNP/NPNI. 5 ..
2SC2336A ,PNP/NPN SILICON EPITAXIAL TRANSISTOR2SA1006,1006A,1006B/2sC2336,2336A,2336B , 2SA1006,1006A,1006B/2SC2336,2336A,23368 PNP/NPNI. 5 ..

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2N3055-2N3055H
COMPLEMENTARY SILICON POWER TRANSISTORS
2N3055, MJ2955
Preferred Device
Complementary Silicon
Power Transistors
...designed for general−purpose switching and amplifier
applications. DC Current Gain − hFE = 20−70 @ IC = 4 Adc Collector−Emitter Saturation Voltage −
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb−Free Package is Available
MAXIMUM RATINGS
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THERMAL CHARACTERISTICS
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Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
160 25 50 75 100 125 150 175 200
, POWER DISSIP
TION (W
TTS)
100

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