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2N3019SSSN/a106avaiGENERAL TRANSISTOR NPN SILICON


2N3020 ,GENERAL TRANSISTOR NPN SILICONapplications involving pulsed or lowduty cycle operations. 3. These ratings give a maximum junct ..
2N3020 ,GENERAL TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CH ..
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2N3019
GENERAL TRANSISTOR NPN SILICON
2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features MILïPRFï19500/391 Qualified Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
CollectorïEmitter Voltage VCEO 80 Vdc
CollectorïBase Voltage VCBO 140 Vdc
EmitterïBase Voltage VEBO 7.0 Vdc
Collector Current ï Continuous IC 1.0 Adc
Total Device Dissipation @ TA = 25°C
2N3019, 2N3019S
2N3700
Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S
2N3700 5.0
Operating and Storage Junction
Temperature Range
TJ, Tstg ï65 to
+200
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient2N3019, 2N3019S
2N3700
RJA 195
°C/W
Thermal Resistance, Junction to Case
2N3019, 2N3019S
2N3700
RJC
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
BASE
EMITTER
TOï5
CASE 205AA
STYLE 1
2N3019
Device Package Shipping
ORDERING INFORMATION
JAN2N3019
JANTX2N3019 TOï5 Bulk
JANTXV2N3019
JAN2N3019S
JANTX2N3019S TOï39 Bulk
JANTXV2N3019S
TOï39
CASE 205AB
STYLE 1
2N3019S
TOï18
CASE 206AA
STYLE 1
2N3700
JAN2N3700
JANTX2N3700 TOï18 Bulk
JANTXV2N3700
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