2N2484 ,NPN SILICON PLANAR TRANSISTORThe documentation and process comply with this revision shall be SEMICONDUCTOR DEVICE, TRANSIS ..
2N2575 ,SILICON CONTROLLED RECTIFIERS
2N2605 , Chip Type 2C2605 Geometry 0220 Polarity NPN
2N2605 , Chip Type 2C2605 Geometry 0220 Polarity NPN
2N2609 ,Conductor Products, Inc. - 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
2N2609 ,Conductor Products, Inc. - 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
2SC2230 ,Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSTOSHIBA 2SC2230,2SC2230ATOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)9ftt''DTIl ..
2SC2230 ,Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSAPPLICATIONS I :54 MAX} l0 High Voltage : VCE0=18OV (2SC2230A)0 High DC Current Gain.OJSMAXMAXIMUM ..
2SC2233 , NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications)
2SC2233 , NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications)
2SC2235 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2236 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2N2484
NPN SILICON PLANAR TRANSISTOR
MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope . This specification covers the performance requirements for NPN, silicon, low-power transistors.
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions . See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings .
(1) Derate linearly at 3.08 mW /°C above T A = +37.5 °C
(2) Derate linearly at 4.76 mW/ °C above T A = +63.5 °C.
1.4 Primary electrical characteristics .
(1) Pulsed (see 4.5.1).
AMSC N/A FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/376E Note
NOTES: Dimension are in inches. Metric equivalents are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured fro m maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall
be within .007 inch (0.18 mm) radius of true position (TP) at maximum material co ndition
(MMC) relative to tab at MMC. Dimension LU applies between L 1 and L 2. Dimension LD applies between L 2 and LL
minimum. Diameter is uncontrolled in L 1 and beyond LL minimum. All three leads. The collector shall be internally connect ed to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to fx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-18) .
MIL-PRF-19500/376E
NOTES: Dimensions are in inches. Metric equivalents are given for general information only. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). The corner shape (square, notch, radius, etc. ) may vary at the manufacturer's option, from that shown on
the drawing. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an
unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was
designed. ( Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension
"B3" maximum and "L3" maximum define the maximum width and depth of the castellation at any point on
its surface. Measurement of these dimensions may be made prior to solder dipping. Lead 4 = no connection.
FIGURE 2. Physical dimensions, surface mount (2N2484UA) .
MIL-PRF-19500/376E
NOTES: Dimensions are in inches. Metri c equivalents are given for general information only. Dimensions B2 and B3 are identical to B1 Dimension L2 is identical to L1.
FIGURE 3. Physical dimensions, surface mount (2N2484UB) .
MIL-PRF-19500/376E
A- version
NOTES: Die size ................................ ............... 0.015 x 0. 019 inches ± 0.001 inch Die thickness ................................ ....... 0.010 ± 0.0015 inches Top metal ................................ ............ Aluminum 15,000Å minimum, 18,000Å nominal Back metal ................................ .......... A. Gold 2,500Å minimum, 3,000Å nominalEutectic Mount – No Gold Backside ................................ ............. Collector Bonding pad ................................ ........ B = 0 .003 inches, E = 0.004 inches diameter Passivation ................................ ......... Si3N4 (Silicon Nitride) 2kÅ min, 2.2kÅ nom.
FIGURE 4. Physical dimensions, JANHC and JANKC die, A - version .
MIL-PRF-19500/376E
B - version
Die size: ................................ ..................... 0.018 x 0.018 inches
Die thickness: ................................ ............ 0.008 ± 0.0016 inches
Base pad: ................................ .................. 0.0025 inches diameter
Emitter pad: ................................ ............... 0.003 inches diameter
Back metal: ................................ ................ Gold, 6500 ± 1950 Å
Top metal: ................................ ................. Aluminum, 19500 ± 2500 Å
Back side: ................................ .................. Collector
Glassivation: ................................ .............. SiO2, 7500 ± 1500 Å
FIGURE 5. Physical dimensions, JANHC and JANKC die, B - version .
MIL-PRF-19500/376E
1.4 Primary electrical characteristics .
2. APPLICABLE DOCUMENTS
2.1 General . The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents .
2.2.1 Specifications, standards, and handbooks . The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards ( DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence . In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
MIL-PRF-19500/376E
3. REQUIREMENTS
3.1 General . The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification . Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions . Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions . The interface and physical dimensions shall be as specified in MIL-PRF-
19500 and figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish . Unless otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500,
and herein.
3.5 . Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking
may be omitted from the body, but shall be retained on the initial container.
3.6 Electrical performance characteristics . Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table I
herein.
3.8 Workmanship . Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections . The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection . Qualification inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.2.1.
MIL-PRF-19500.
MIL-PRF-19500/376E
4.3 Screening (JANS, JANTX, and JANTXV levels only) . Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
4.3.1 Power burn-in conditions . Power burn-in conditions are as follows: V CB = 10 to 30 V dc:
Power shall be applied to achieve T J = 135 °C minimum and a minimum power dissipation = 75 percent of
maximum rated P T (see 1.3). T A = room ambient as defined in 4.5 of MIL-STD-750.
NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4.3.2 Thermal impedance (Z measurements) . The Z qJX measurements shall be performed in accordance
with method 3131 of MIL-STD-750.
a. I M measurement current ------------- 5 mA.
b. I H forward heating current ----------- 50 mA (min).
c. t H heating time ------------------------- 25 - 30 ms.
d. tmd measurement delay time ------ 60 ms max.
e. V CE collector-emitter voltage ------ 10 V dc minimum .
The maximum limit for Z qJX under these test conditions are Z qJX (max) = 150 °C/W for 2N2484, Z qJX (max) = 67 °C/W
for 2N2484UA and 2N2484UB.
MIL-PRF-19500/376E
4.4 Conformance inspection . Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) shall be
in accordance with group A, subgroup 2 herein. Delta requirements shall be in accordance with table III herein.
See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta
requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with
group A, subgroup 2 herein. Delta requirements shall be after each step and shall be in accordance with table III
herein.
4.4.2.1
Subgroup Method Condition
B4 1037 VCB = 10 V dc
B5 1027 VCB = 10 V dc; T A = +125 °C ±25°C for 96 hours with P T adjusted according to the chosenA to give T J = +275 °C minimum. Optionally, the test may be conducted for
minimum 216 hours with P T adjusted to achieve T J = 225 °C minimum, sample size (for
option) n = 45, c = 0. In this case, the ambient temperature shall be adjusted such that a
minimum 75 percent of maximum rated P T (see 1.3) is applied to the device under test.
(Note: If a failure occurs, resubmission shall be at the test conditions o f the original
sample.)
4.4.2.2
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly
lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step Method Condition
1 1039 Steady-state life: Test condition B, 340 hours, V CB = 10 -30 V dc, T J = 150 °C min.,
external heating of the device under test to achieve T J = +150 °C minimum is allowed
provided that a minimum of 75% of rated power is dissipated. No heat sink or forced-air
cooling on the devices shall be permitted. n = 45 d evices, c = 0
2 1039 The steady state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot. n = 45,
c = 0.
3 1032 High-temperature life (non-operating), t = 340 hours, T A = +200 °C. n = 22, c = 0.
