2N2219 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N2221 ,Leaded Small Signal Transistor General PurposeABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-base Voltage (I =0) 60 VCBO EV Colle ..
2N2221A ,NPN SILICON PLANAR SWITCHING TRANSISTORSELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
PACKAGE
2 ..
2N2221A ,NPN SILICON PLANAR SWITCHING TRANSISTORSapplications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junc ..
2N2222 ,Leaded Small Signal Transistor General Purpose-FAIRCHILD SEMICONDUCTOR
3469674 FAIRCHILD SEMICONDUCTOR 84D 27504 D-,
i-gtg-I-l- 72:27-23
FAI ..
2N2222A ,NPN SILICON PLANAR SWITCHING TRANSISTORS-FAIRCHILD SEMICONDUCTOR
3469674 FAIRCHILD SEMICONDUCTOR 84D 27504 D-,
i-gtg-I-l- 72:27-23
FAI ..
2SC2060 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC2060 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC2068 ,SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)TOSHIBA IMiScRETfr/()PT01 Sl, IHIIHDH?ESU DDD?HEE l Ir/9097250 TOSHIBA (DISCRETE/OPTO) 50Q707466 D ..
2SC2073A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC2075 ,Silicon NPN Power Transistors TO-220 packageTOSHIBA f0ISCRfrTE/0PT0y Sl, os:Fvrizso EIE||37H7IJ 3 r9097250 TOSHTBA di:nii'bRirrE/oPTos SEC 0747 ..
2SC2078 ,NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier ApplicationsOrdering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier Applic ..
2N2219
Leaded Small Signal Transistor General Purpose
2N2219, 2N2219A,
2N2219AL
Small Signal Switching
Transistor
NPN Silicon
Features MILïPRFï19500/251 Qualified Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
CollectorïEmitter Voltage VCEO 50 Vdc
CollectorïBase Voltage VCBO 75 Vdc
EmitterïBase Voltage VEBO 6.0 Vdc
Collector Current ï Continuous IC 800 mAdc
Total Power Dissipation @ TA = 25°C PT 0.8 W
Total Power Dissipation @ TC = 25°C PT 3.0 W
Operating and Storage Junction
Temperature Range
TJ, Tstg ï65 to
+200
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RJC 50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
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COLLECTOR
BASE
EMITTER
Device Package Shipping
ORDERING INFORMATION
JAN2N2219/A
JANTX2N2219/A TOï39 Bulk
JANTXV2N2219/A
TOï5
CASE 205AA
(2N2219AL)
TOï39
CASE 205AB
(2N2219, 2N2219A)
JAN2N2219AL
JANTX2N2219AL TOï5 Bulk
JANTXV2N2219AL
