2N2102 ,AMPLIFIER TRANSISTOR NPN SILICON2N2102®EPITAXIAL PLANAR NPN■ GENERAL PURPOSE AMPLIFIER ANDSWITCHDESCRIPTION ..
2N2192A , Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.
2N2218 ,Leaded Small Signal Transistor General Purposeapplicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range ..
2N2218A ,NPN SILICON PLANAR SWITCHING TRANSISTORSELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CH ..
2N2219 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N2221 ,Leaded Small Signal Transistor General PurposeABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-base Voltage (I =0) 60 VCBO EV Colle ..
2SC2058S , High-frequency Amplifier Transistor(25V, 50mA, 300MHz)
2SC2060 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC2060 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC2068 ,SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS)TOSHIBA IMiScRETfr/()PT01 Sl, IHIIHDH?ESU DDD?HEE l Ir/9097250 TOSHIBA (DISCRETE/OPTO) 50Q707466 D ..
2SC2073A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC2075 ,Silicon NPN Power Transistors TO-220 packageTOSHIBA f0ISCRfrTE/0PT0y Sl, os:Fvrizso EIE||37H7IJ 3 r9097250 TOSHTBA di:nii'bRirrE/oPTos SEC 0747 ..
2N2102
AMPLIFIER TRANSISTOR NPN SILICON
2N2102EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER AND
SWITCH
DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
intended for a wide variety of small-signall and
medium power applications in military and
industrial equipments.
December 2002
ABSOLUTE MAXIMUM RATINGS1/4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle ≤ 1 %
2N21022/4
2N21023/4
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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2N21024/4
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