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Partno	Mfg	Dc	Qty	Available	Descript
2N1613	ST	N/a	839	avai	Leaded Small Signal Transistor General Purpose

2N1613 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T =25°C unless otherwise specified)ambSymbol Parameter Test Conditions ..
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2N1613
Leaded Small Signal Transistor General Purpose
2N1613 1711
SWITCHES AND UNIVERSAL AMPLIFIERS
The 2N1613 and2N1711are siliconplanar epitaxial
NPN transistorsin Jedec TO-39 metal case. They
are designedforusein high-performance amplifier,
oscillator and switching circuits.
The 2N1711is also usedto advantagein amplifiers
wherelow noiseis animportant factor.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-base Voltage(IE =0) 75 V
VCER Collector-emitter Voltage (RBE≤10 Ω)50 V
VEBO Emitter-base Voltage(IC =0) 7 V Collector Current 500 mA
Ptot Total Power DissipationatTamb≤25°C Tcase≤25°C
Products approvedto CECC 50002-104 avail-
ableon request.
DESCRIPTION
TO-39
INTERNAL SCHEMATIC DIAGRAM
ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current
(IE =0)
VCB =60V
VCB =60V Tamb =150°C
IEBO Emitter Cutoff Current
(IC =0) VEB=5V for 2N1613
for 2N1711
V(BR)CBO Collector-base Breakdown
Voltage IC=0.1mA 75 V
V(BR)CER* Collector-emitter
Breakdown Voltage
(RBE≤10Ω) =10mA 50 V
V(BR)EBO Emitter-base Breakdown
Voltage(IC =0) IE=0.1mA 7 V
VCE(sat)* Collector-emitter
Saturation Voltage IC=150mA IB=15mA 0.5 1.5 V
VBE(sat)* Base-emitter Saturation
Voltage IC=150mA IB=15mA 0.95 1.3 V
hFE* DC Current Gain for 2N1613= 0.01mA=0.1mA =10mA =150mA =500mA =10mA
Tamb =–55°C
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
hFE* DC Current Gain for 2N1711= 0.01mA=0.1mA =10mA =150mA =500mA =10mA
Tamb =55°C
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
VCE =10V
hfe Small Signal Current Gainfor 2N1613=1mA=1kHz
for 2N1711=1mA=1kHz
VCE =10V
VCE =10V
300 Transition Frequency IC =50mA=20 MHz
VCE =10V
for 2N1613
for 2N1711
MHz
MHz
CEBO Emitter-base CapacitanceIC=01 MHz VEB=0.5V 50 80 pF
CCBO Collector-base
Capacitance=01 MHz VCB =10V 18 25 pF
THERMAL DATA
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
2N1613-2N1711
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit Noise Figure IC=0.3mA =510Ω
VCE =10V=1kHz
for 2N1613
for 2N1711
hie Input Impedance IC=1mA=1 KHz
VCE=5V
for 2N1613
for 2N1711
hre Reverse Voltage Ratio IC=1mA=1kHz
VCE=5V
for 2N1613
for 2N1711
3.6x10–4
7.3x10–4
hoe Output Admittance IC=1mA=1kHz
VCE=5V
for 2N1613
for 2N1711
23.8 Pulsed: pulse duration=300μs,duty cycle=1%.
2N1613-2N1711
DIM. inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 6.6 0.260 8.5 0.334 9.4 0.370 5.08 0.200 1.2 0.047 0.9 0.035
L45o (typ.)E
TO39 MECHANICAL DATA
2N1613-2N1711
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consequencesof useofsuch informationnor forany infringementof patentsor other rightsofthird partieswhich mayresultsfromitsuse.No
license isgrantedby implication orotherwise under anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentionedthis publicationare subjectto change without notice.This publicationsupersedesand replacesall information previously supplied.
SGS-THOMSON Microelectronicsproductsarenot authorizedforuse ascriticalcomponentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics. 1994 SGS-THOMSON Microelectronics-All Rights Reserved
SGS-THOMSON Microelectronics GROUPOF COMPANIES
2N1613-2N1711
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