2MBI50N-060 ,IGBT(600V 50A)Features• Square RBSOA• Low Saturation Voltage• Less Total Power Dissipation• Improved FWD Characte ..
2MBI50N-120 ,IGBT(1200V 50A)Applications• High Power Switching• A.C. Motor Controls• D.C. Motor Controls• Uninterruptible Power ..
2MBI600NT-060 ,IGBT(600V 600A)Applications• High Power Switching• A.C. Motor Controls• D.C. Motor Controls• Uninterruptible Power ..
2MBI75L-060 ,IGBT(600V 75A)Applications
q Inverter for Motor Drive
q AC and DC Servo Drive Amplifier
0 Uninterruptible ..
2MBI75L-120 ,IGBT(1200V 75A)Applications
q Inverter for Motor Drive
q AC and DC Servo Drive Amplifier
O Uninterruptible ..
2MBI75N-060 ,IGBT(600V 75A)Applications• High Power Switching• A.C. Motor Controls• D.C. Motor Controls• Uninterruptible Power ..
2SC1923 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier ApplicationsApplications Small reverse transfer capacitance: C = 0.7 pF (typ.) re Low noise figure: NF ..
2SC1927 ,NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USEDATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIE ..
2SC1940 ,NPN SILICON TRANSISTORFEATURES
The 28C1940 is designed for use in driver stages of audio
frequency amplifiers.
I ..
2SC1940 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
CHARACTERISTIC
hFE1
hFE2
DC Current Gai ..
2SC1941 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation and high breakdown voltage: (0.729353) (01037)
1.0 IN at 2 ..
2SC1942 , HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT
2MBI50N060-2MBI50N-060
