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2SAS52
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CHARACTERISTIC
DC Current Gain
DC Current Gain
TYP. M ..
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27C16
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified
TL/D/10329
27C16
16,384-Bit
(2048
Erasable
CMOS
PROM
Military
Qualified
January 1989
27C16
16,384-Bit (2048x 8) UV Erasable CMOS PROM
Military Qualified
General Description
The 27C16isa high speed16K UVerasable andelectrically
reprogrammable CMOS EPROM, ideally suitedfor applica-
tions where fast turnaround, pattern experimentation and
low power consumptionare important requirements.
The 27C16is packagedina 24-pin dual-in-line packagewith
transparentlid. The transparentlid allowsthe usertoex-
posethe chipto ultraviolet lightto erasethebit pattern.A
new patterncan thenbe writtenintothe deviceby following
the programming procedure.
This EPROMis fabricated withthe reliable, high volume,
time proven, P2CMOSTM silicon gate technology.
The 27C16 specifiedon this data sheetis fully compliant
with MIL-STD-883, RevisionC.
Features Access time downto450ns Low CMOS power consumption Active Power: 26.25 mW max Standby Power: 0.53 mW max (98% savings) Performance compatibleto NSC800TM CMOS micro-
processor Single5V power supplyPin compatibleto MM2716and higher density EPROMs StaticÐno clocks required TTL compatible inputs/outputs TRI-STATEÉ output WindowedDIP Package Specifications guaranteed overfull military temperature
range (b55§Cto a125§C)
Block Diagram
TL/D/10329–1
Pin Names
A0–A10 Addresses Chip Enable Output Enable
O0–O7 Outputs
PGM Program No Connect
TRI-STATEÉ isaregistered trademarkof National SemiconductorCorporation.
NS800TMareP2CMOSTM trademarks ofNationalSemiconductor Corporation.
C1995National SemiconductorCorporation RRD-B30M105/PrintedinU.S.A.
