27C010 ,1 /048 /576-Bit (128K x 8) High Performance CMOS EPROMFeaturesThe “Don’t Care” feature during read operations allows memoryexpansions from 1M to 8M bits ..
27C020 ,2 Megabit (256 K x 8-Bit) CMOS EPROMFeatures• Fast Read Access Time - 55 ns• Low Power CMOS Operation– 100 μA max. Standby– 25 mA max. ..
27C040 ,4-Megabit 512K x 8 OTP EPROMFeatures• Fast Read Access Time - 70 ns• Low Power CMOS Operation100 μA max. Standby30 mA max. Act ..
27C040 ,4-Megabit 512K x 8 OTP EPROMAT27C040
27C080 ,8-Megabit 1M x 8 UV Erasable CMOS EPROMfeatures to ensure high close to the device as possible. Additionally, to stabilize the™ quality an ..
27C1024 ,1 Megabit (65 K x 16-Bit) CMOS EPROMLogic DiagramThe FDIP40W (window ceramic frit-seal package)has a transparent lid which allows the u ..
2SA817 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Ampli ..
2SA817 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier ApplicationsApplications Unit: mm Complementary to 2SC1627. Suitable for driver of 20~25 watts audio am ..
2SA817A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA821 , PNP Plastic Encapsulated Transistor
2SA825 , 2SA785 2SA786 2SA825 2SA826
2SA825 , 2SA785 2SA786 2SA825 2SA826
27C010
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM . . . . . . . . . October 1998 NM27C010 1,048,576-Bit (128K x 8) High Performance CMOS EPROM The NM27C010 is manufactured using Fairchild’s advanced General Description CMOS AMG™ EPROM technology. The NM27C010 is a high performance, 1,048,576-bit Electrically The NM27C010 is one member of a high density EPROM Family Programmable UV Erasable Read Only Memory. It is organized which range in densities up to 4 Megabit. as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. Features The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with no printed circuit boardnHigh performance CMOS changes. —70 ns access time The NM27C010 can directly replace lower density 28-pin EPROMsnFast turn-off for microprocessor compatibility by adding an A16 address line and V jumper. During the normal CCnSimplified upgrade path read operation PGM and V are in a “Don’t Care” state which PP —V and PGM are “Don’t Care” during normal read PP allows higher order addresses, such as A17, A18, and A19 to be operation connected without affecting the normal read operation. This nManufacturers identification code allows memory upgrades to 8M bits without hardware changes. nFast programming The NM27C010 is also offered in a 32-pin plastic DIP with the same upgrade path.nJEDEC standard pin configurations —32-pin PDIP package The NM27C010 provides microprocessor-based systems exten- —32-pin PLCC package sive storage capacity for large portions of operating system and —32-pin CERDIP package application software. Its 70 ns access time provides no-wait-state operation with high-performance CPUs. The NM27C010 offers a single chip solution for the code storage requirements of 100% firmware-based equipment. Frequently-used software routines are quickly executed from EPROM storage, greatly enhancing system utility. Block Diagram Data Outputs O - O 0 7 V CC GND V PP OE Output Enable, CE Chip Enable, and Output Program Logic PGM Buffers Y Decoder 1,048,576-Bit Cell Matrix A - A 0 16 Address Inputs X Decoder DS010798-1 © 1998 1 NM27C010 ver. 1.1
