20N03HL ,HDTMOS E-FET High Density Power FET DPAK for Surface MountMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 30 ..
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2743019447 , RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
2743019447 , RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
2743037447 ,Rite Products Corp. - 43 SM BEAD
2743037447 ,Rite Products Corp. - 43 SM BEAD
20N03HL-MTD20N03HL
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
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N–Channel Enhancement–Mode Silicon GateThis advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Designer’s, E–FET, and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
