20ETF12S ,1200V Fast Recovery Diode in a D2-Pak packageFeaturesThe 20ETF..S fast soft recovery QUIETIR rectifierseries has been optimized for combined sho ..
20ETS08 ,800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)packageBulletin I2101 rev. D 12/01SAFEIR Series20ETS12, 20ETS12SINPUT RECTIFIER DIODEV < 1V @ 10AF ..
20ETS08FP ,800V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)packageApplications Single-phase Bridge Three-phase Bridge UnitsCapacitive input filter TA = 55°C, TJ = 12 ..
20ETS08STRR ,800V 20A Std. Recovery Diode in a D2-PakpackageApplicationsSingle-phase Bridge Three-phase Bridge UnitsCapacitive input filter TA = 55°C, TJ = 125 ..
20ETS12 ,1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)packageapplications are in input rectification andthese products are designed to be used withInternational ..
20ETS12S ,1200V 20A Std. Recovery Diode in a D2-PakpackageFeaturesRRMThe 20ETS.. rectifier SAFEIR series has beenoptimized for very low forward voltage drop, ..
27128 ,NMOS 128K 16K x 8 UV EPROMLogic DiagramThe M27128A is a 131,072 bit UV erasable andelectrically programmable memory EPROM. It ..
27256 ,256K (32k x 8) Bit NMOS UV Erasable PROMAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
2741B , HIGH FREQUENCY MAGNETICS T1/E1 Through Hole Shielded Transformers
2741G2 , HIGH FREQUENCY MAGNETICS T1/E1 Single Through Hole Shielded Transformers
2743019447 , RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
2743019447 , RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
20ETF10S-20ETF12S
800V Fast Recovery Diode in a D2-Pak package
12128 rev. A 01/2000
International QUIETIR Series
15.3% Rectifier 20ETF..S HV
FAST SOFT RECOVERY
RECTIFIER DIODE VF < 1.31V @ 20A
IFSM = 355A
vRRM 800 to 1200V
Description/Features
The 20ETF..S fast soft recovery QUIETIR rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power
cycling conditions.
Typical applications are both:
I: output rectification and freewheeling in
inverters, choppers and converters
u and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics Package Outline
Characteristics 20ETF..S Units
IHAV) Sinusoidalwaveform 20 A
VRRM range 800to 1200 V
|FSM 355 A
VF @20A,TJ=25°C 1.31 v
trr @1A,100A/ps 95 ns
D2 Pak (SMD-220)
T J range -40to 150 (
20ETF..S HV QUIETIR Series International
I2128 rev.A 01/2000 IEER Rectifier
Voltage Ratings
VRHM , maximum VRSM, maximum non repetitive IRRM
Part Number peak reverse voltage peak reverse voltage 150°C
V V mA
20ETF08S 800 900
20ETF1OS 1000 1100 6
20ETF12S 1200 1300
Absolute Maximum Ratings
Parameters 20ETF..S Units Conditions
IFW) Max.AverageForwardCurrent 20 A @TC=97°C,180°conductionhalfsinewave
|FSM Max.PeakOneCycIeNon-Repetitive 300 A 10msSinepulse,ratedVrmMapplied
SurgeCurrent 355 10msSine pulse, novoltagereapplied
I2t Max. |2tforfusing 450 A25 10msSinepulse,ratedVRRMapplied
635 10msSinepulse,novoltagereapplied
|th Max. fNtforfusing 6350 A2\/s t=0.1to10ms,novoltagereapplied
Electrical Specifications
Parameters 20ETF..S Units Conditions
v,,, Max. Forward Voltage Drop 1.31 V @ 20A, T, = 25°C
r, Forward slope resistance 11.88 mn
T J = 150°C
VFUO) Threshold voltage 0.93 V
I Max. Reverse Leaka eCurrent 0.1 T = 25 ''C
RM g mA J v,, = rated Vma,
6 T J = 150 ''C
Recovery Characteristics
Parameters 20ETF..S Units Conditions
trr Reverse Recovery Time 400 ns IF @ 20Apk
|rr Reverse Recovery Current 6.1 A © 25A/ us
Qrr Reverse Recovery Charge 1.7 pC © 25°C
S Snap Factor tb/ta 0.6 typical
