IC Phoenix
 
Home ›  221 > 20CTQ150-1PBF-20CTQ150PBF-20CTQ150SPBF-20CTQ150STRLPBF,SCHOTTKYRECTIFIER
20CTQ150-1PBF-20CTQ150PBF-20CTQ150SPBF-20CTQ150STRLPBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
20CTQ150-1PBF |20CTQ1501PBFIRN/a62avaiSCHOTTKYRECTIFIER
20CTQ150PBFIRN/a128avaiSCHOTTKYRECTIFIER
20CTQ150SPBFIRN/a329avaiSCHOTTKYRECTIFIER
20CTQ150STRLPBFIRN/a32avaiSCHOTTKYRECTIFIER


20CTQ150SPBF ,SCHOTTKYRECTIFIERBulletin PD-20648 rev. C 09/0420CTQ15020CTQ150S20CTQ150-1SCHOTTKY RECTIFIER 20 AmpDescription ..
20CTQ150STRLPBF ,SCHOTTKYRECTIFIERFeaturesMajor Ratings and CharacteristicsThis center tap Schottky ectifier has been optimized for l ..
20CWT10FNTRL , High Performance Schottky Generation 5.0, 2 x 10 A
20D-561K , VARISTOR
20DL2C41A ,HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION20DL2C41A,20FL2C41A,20GL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 20D ..
20ETF02 ,200V Fast Recovery Diode in a TO-220AC packageapplications are both:output rectification and freewheeling ininverters, choppers and convertersand ..
27128 ,NMOS 128K 16K x 8 UV EPROMLogic DiagramThe M27128A is a 131,072 bit UV erasable andelectrically programmable memory EPROM. It ..
27256 ,256K (32k x 8) Bit NMOS UV Erasable PROMAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
2741B , HIGH FREQUENCY MAGNETICS T1/E1 Through Hole Shielded Transformers
2741G2 , HIGH FREQUENCY MAGNETICS T1/E1 Single Through Hole Shielded Transformers
2743019447 , RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
2743019447 , RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs


20CTQ150-1PBF-20CTQ150PBF-20CTQ150SPBF-20CTQ150STRLPBF
SCHOTTKYRECTIFIER
International
IézR Rectifier
Bulletin PD-20648 rev.C 09/04
ZOCTQ150
20CTQ150S
20CTQ150-1
SCHOTTKYRECTlFIER
Major Ratings and Characteristics
Description! Features
This center tap Schottky ectifer has been optimized for low
Characteristics Values Units reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
I Rectangular 20 A temperature. Typical applications are in switching power
F(AV) f supplies, converters, free-wheeling diodes, and reverse bat-
wave orm tery protection.
VRRM 150 V . 175° C TJ operation
I t =5 . 1030 A . Centertap configuration
FSM © " us me . Low forward voltage drop
_ o . High purity, high temperature epoxy encapsulation for
VF @10Apk,To= 125 C 0.66 V enhanced mechanical strength and moisture resistance
(per leg) . High frequency operation
T range -55to175 ''C . Guard ring for enhanced ruggedness and long term
J reliability
Case Styles
20CTQ150 20CTQ150S 20CTQ150-1
Base Base Base
Common Common Common
Cathode Calhode Cathode
I Common 3 I Common 3 l Common 3
Anode Cathode Anode Anode Cathode Anode Anode Ca(hode Anode
TO-220AB D2PAK TO-262
1
20CTQ150, 20CTQ150S, 20CTQ150-1
Bulletin PD-20648 rev.C 09104
International
IEER Rectifier
Voltage Ratings
20CTQ150
Parameters 20CTQ150S
20CTQ150-1
VR Max. DC Reverse Voltage (V) 150
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Values Units Conditions
IHAV) Max. Average Forward (Per Leg) 10 A 50% duty cycle@ TC=154°C,rectangu|ar wave form
Current * See Fig. 5 (Per Device) 20
IFSM Max. Peak One Cycle Non-Repetitive 1030 5ps Sine or Sus Rect. pulse Followin . any r.ate.d
. A . load con men and with
Surge Current (Per Leg) * See Fig. 7 180 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAs Non-Repetitive Avalanche Energy 2.45 mJ TJ = 25''C, IAS = 0.7Amps,L=10mH
(Per Leg)
IAR Repetitive Avalanche Current 0.7 A Current decaying linearly to zero in 1 psec
(Per Leg) Frequency limited by T, max.VA=1.5xVR typical
Electrical Specifcations
Parameters Typ. Max. Units Conditions
V Ma . Forward Volta e Dre 1 0.80 0.88 V 10A
FM x g p (1) @ Ts-- 25°C
(Per Leg) * See Fig. 1 0.90 1.0 V @ 20A
0.63 0.66 V @ 10A
T = 125 °C
0.73 0.77 v @ 20A J
Ira, Max. Reverse Leakage Current 3.0 25 pA T J = 25 "C
. o VR = rated VR
(Per Leg) * See Fig. 2 2.7 5.0 mA TJ = 125 C
c, Typical Junction Capacitance (Per Leg) - 280 pF VR = 5VDC (test signal range 100kHz to 1Mhz)
@ 25°C
LS Typical Series Inductance (Per Leg) - 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 W us (Rated VR)
. . . (1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Values Units Conditions
TJ Max. Junction Temperature Range -55to 175 "C
Tstg Max. Storage Temperature Range -55to175 ''C
RmJC Max. Thermal Resistance Junction 2.0 °C/W DC operation
to Case (Per Leg)
RthJC Max. Thermal Resistance Junction 1.0 °C/W DC operation
to Case (Per Package)
Recs TypicaIThermalResistance, 0.50 "C/W Mounting surface,smooth and greased
Case to Heatsink (only for TO-220)
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5) Kg-cm
Max. 12(10) (lbt-in)
Marking Device 20CTQ150 Case style TO-220
20CTQ1508 Case style DZ-Pak
20CTQ150-1 Case style TO-262

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED