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20CTH03-20CTH03S
300V 20A HyperFast Discrete Diode in a TO-220AB package
International
152R Rectifier
Hyperfast Rectifier
Featu res
. Hyperfast Recovery Time
. Low Forward Voltage Drop
. Low Leakage Current
. 175°C Operating Junction Temperature
Description/ Applications
Bulletin PD-20769 rev.A 08/03
20CTH03
20CTHO3S
20CTH034
20CTH03FP
trr = 35ns max.
|F(AV) = 20Amp
VR = 300V
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters Max Units
VRRM Peak Repetitive Reverse Voltage 300 V
WAV) Average Rectified Forward Current @ Tc = 160°C Per Diode 10 A
@ TC = 135°C (FULLPACK) Per Diode
Per Device 20
IFSM Non Repetitive Peak Surge Current @ T: = 25°C 120
Ts TSTG Operating Junction and Storage Temperatures - 65 to 175 "C
Case Styles
20CTH03 20CTH03S 20CTH03-1 20CTH03FP
ti,ii,iijt
Base Base Base
Common Common Common
Cathode Cathode Cathode
1 Commin a 1 Comm; 1 3 1 Commozn 3 1i Common 3
Anode Cathode Anode Anode Cathode MMe Anode Cathode Anode Anode Cathode Anode
TO-220AB D2PAK TO-262 TO-220 FULLPACK
20CTH03, 20CTH03S, 20CTH03-1, 20CTH03FP
International
Bulletin PD-20769 rev. A 08/03 TOR Rectifier
Electrical Characteristics (ti) Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, Breakdown Voltage, 300 - - V IR = 100pA
Blocking Voltage
VF Forward Voltage - 1.05 1.25 IF = 10A, TJ = 25°C
- 0.85 0.95 IF = 10A, TJ = 125°C
IR Reverse Leakage Current - - 20 pA VR = VR Rated
- 6 200 pA To = 125°C, I/e = VR Rated
CT Junction Capacitance - 30 - pF VR = 300V
Ls Series Inductance - 8 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ Tc = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time - - 35 ns IF = 1A, diF/dt = 50/Ups, VR = 30V
- - 30 IF = 1A, diF/dt = 100Alps, VR = 30V
- 31 - To = 25°C
- 42 - To = 125''C IF = 10A
IRRM Peak Recovery Current - 2.4 - A To = 25°C diF/dt = 200Alps
- 5.6 - To = 125°C VR = 200V
Qrr Reverse Recovery Charge - 36 - nC To = 25°C
- 120 - To = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
To Max. Junction Temperature Range - - 175 ''C
Tso Max. Storage Temperature Range - 65 - 175
Rvuc Thermal Resistance, Junction to Case Per Diode - - 1.5 ''C/W
Fullpack (Per Diode) - - 3.9
2
