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20BQ030PBF-20BQ030TRPBF
SCHOTTKYRECTIFIER
International
ISER Rectifier
Bulletin PD-20717 rev.G 07/04
SCHOTTKYRECTlFlER
Major Ratings and Characteristics
kww=2Amp
VR = 30V
Description! Features
Characteristics 2030030 Units The. 20BQ030 sufar-mount Sphottky rectifier has been
designed for applications requmng low forward drop and
small foot prints on PC boards. Typical applications are in disk
|F(AV) Rectangularwaveform 2.0 A drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
VRRM 30 V . Small foot print, surface mountable
IFSM @tp= 5 us sine 350 A . Very low forward voltage drop
. High frequency operation
V @2.0Apk T =125°C 0.37 V . Guard ring for enhanced ruggedness and long term
F , J reliability
To range -55 to 150 "C
Case Styles
20BQ030
Cathode Anode
1
2030030 International
Bulletin PD-20717 rev. G 07/04 TOR Rectifier
Voltage Ratings
Part number 20BQ030
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 30
Absolute Maximum Ratings
Parameters 20BQ Units Conditions
IHAV) Max. Average Forward Current 2.0 A 50% duty cycle @ Tr, = 119 "C, rectangularwave form.
. - . . . R . I Following any rated
|FSM Max Peak One Cycle Non Repetitive 350 Sus Sln.e or3ps ect pu se load condition and
Surge Current 80 10ms Sine or 6ms Rect. pulse with rated vRRM applied
EAS Non-Repetitive Avalanche Energy 3.0 mJ T., = 25 "C, |As = 1A, L = 6mH
I AR Repetitive Avalanche Current 1.0 A Current decaying linearlyto zero in 1 psec
Frequency limited by T, max. Va = 1.5 er typical
Electrical Specifications
Parameters 20BQ Units Conditions
. . 2A
I/m Max Forward Voltage Drop (1) 0 470 V @ TJ = 25 ''C
0.550 V @ 4A
I/m Max. Fon/vard Voltage Drop (1) 0.370 V @ 2A Tu = 125 "C
0.470 V @ 4A
. . = 5 ''C
|RM Max Reverse Leakage Current (1) 0 5 mA Tu 2 v,, = rated VR
15 mA T J = 125 ''C
c, Max. Junction Capacitance 200 pF VR = SVDC. (test signal range 100KHz to 1Mhz) 25°C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 20BQ Units Conditions
T., Max.Junction Temperature Range (*) - 55 to 150 ''C
stg Max. Storage Temperature Range -55 to 150 "C
thJL Max. Thermal Resistance Junction 25 °CNV DC operation
to Lead (**)
RthJA Max. Thermal Resistance Junction 80 °CNV
to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similar DO-214AA
Device Marking IR2E
m dPtot 1
V V thermal runaway condition foradiode onits own heatsink
de Rth(]-a)
(**) Mounted 1 inch square PCB
2