5 Volt, Byte Alterable E2PROM The **X28C513EM-12** is a **512K (64K x 8) CMOS EEPROM** manufactured by **Xicor**. Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Density:** 512K (64K x 8)
- **Technology:** CMOS EEPROM
- **Access Time:** 120ns
- **Operating Voltage:** 5V ±10%
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Endurance:** 100,000 write cycles per byte
- **Data Retention:** 100 years
- **Package Options:** 32-pin PDIP, PLCC, or TSOP
### **Descriptions:**
- The **X28C513EM-12** is a high-performance, byte-erasable EEPROM with a fast read access time.
- It features a **Page Write Mode** for faster programming, allowing up to 64 bytes to be written in a single operation.
- The device supports **JEDEC-standard** pinout for compatibility with other EEPROMs.
- It includes **internal control timers** for write cycle completion, eliminating the need for external polling.
### **Features:**
- **Fast Read Access Time:** 120ns
- **Low Power Consumption:**
- Active Current: 30mA (max)
- Standby Current: 100μA (max)
- **Page Write Mode:** Up to 64 bytes per write cycle
- **Hardware & Software Data Protection:**
- **VCC Power-Up/Down Protection**
- **Write Protect (WP) Pin**
- **Software Write Lock** via command sequence
- **Self-Timed Write Cycle:** Typically 5ms
- **High Reliability:**
- 100,000 erase/write cycles per byte
- 100-year data retention
This EEPROM is designed for applications requiring non-volatile memory with fast access and high endurance, such as embedded systems, industrial controls, and telecommunications.
*(Note: Always refer to the official datasheet for detailed technical information.)*
