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VNP7N04-E from ST,ST Microelectronics

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VNP7N04-E

Manufacturer: ST

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP7N04-E,VNP7N04E ST 5000 In Stock

Description and Introduction

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET The VNP7N04-E is a power MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Specifications:**  
- **Type:** N-channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 7A  
- **Pulsed Drain Current (IDM):** 28A  
- **Power Dissipation (PD):** 30W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-State Resistance (RDS(on)):** 0.045Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **Input Capacitance (Ciss):** 520pF (typ)  
- **Output Capacitance (Coss):** 120pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 40pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 30ns (typ)  
- **Operating Junction Temperature (TJ):** -55°C to 175°C  

### **Package:**  
- **TO-220AB** (Through-hole, 3-pin)  

### **Features:**  
- Low on-resistance (RDS(on))  
- Fast switching performance  
- High current capability  
- Avalanche ruggedness  
- Improved dv/dt capability  
- Logic-level compatible gate drive  

This information is based on the manufacturer's datasheet. For precise design and application details, refer to the official STMicroelectronics documentation.

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