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VNP49N04 from ST,ST Microelectronics

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VNP49N04

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP49N04 ST 4 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The VNP49N04 is a power MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 49A  
- **Pulsed Drain Current (IDM):** 196A  
- **Power Dissipation (PD):** 125W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.023Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 3V  
- **Input Capacitance (Ciss):** 2200pF (typ)  
- **Output Capacitance (Coss):** 700pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to 175°C  

### **Descriptions & Features:**  
- **Technology:** STripFET™ VI Power MOSFET  
- **Package:** TO-220 (Through-Hole)  
- **Low On-Resistance:** Optimized for high-efficiency power switching  
- **Fast Switching Speed:** Suitable for high-frequency applications  
- **Avalanche Rugged:** Enhanced reliability under high-energy conditions  
- **Logic-Level Gate Drive:** Compatible with 5V logic signals  
- **Applications:** DC-DC converters, motor control, power management, and automotive systems  

This information is based on STMicroelectronics' official datasheet for the VNP49N04. For exact performance characteristics, refer to the manufacturer's documentation.

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