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VNP35N07 from ST,ST Microelectronics

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VNP35N07

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP35N07 ST 2400 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The VNP35N07 is a power MOSFET manufactured by STMicroelectronics. Here are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 70V  
- **Continuous Drain Current (ID):** 35A  
- **Pulsed Drain Current (IDM):** 140A  
- **Power Dissipation (PD):** 125W  
- **RDS(on) (Max):** 0.035Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Threshold Voltage (VGS(th)):** 2V (Min), 4V (Max)  
- **Input Capacitance (Ciss):** 2800pF (Typ)  
- **Operating Temperature Range:** -55°C to 175°C  

### **Description:**  
The VNP35N07 is an N-channel power MOSFET designed for high-current switching applications. It is part of STMicroelectronics' VIPower M0-3 technology, integrating a vertical power structure with a low on-resistance for efficient power handling.  

### **Features:**  
- **Low On-Resistance (RDS(on)):** Minimizes conduction losses.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Rugged:** Capable of handling high-energy pulses.  
- **Logic-Level Gate Drive:** Compatible with 5V drive signals.  
- **ESD Protection:** Improved reliability in harsh environments.  
- **TO-220 Package:** Provides good thermal performance.  

The VNP35N07 is commonly used in automotive, industrial, and power management applications.

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