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VNP28N04. from ST,ST Microelectronics

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VNP28N04.

Manufacturer: ST

鯫MNIFET? FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP28N04.,VNP28N04 ST 167 In Stock

Description and Introduction

鯫MNIFET? FULLY AUTOPROTECTED POWER MOSFET The VNP28N04 is a power MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 28A  
- **Pulsed Drain Current (IDM):** 112A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 28mΩ (typical at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 1V (typical)  
- **Input Capacitance (Ciss):** 1500pF (typical)  
- **Output Capacitance (Coss):** 600pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 200pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The VNP28N04 is a high-current N-channel MOSFET designed for power switching applications. It features low on-resistance and high-speed switching capabilities, making it suitable for automotive and industrial applications.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- Fast switching performance  
- High current handling capability  
- Avalanche ruggedness  
- ESD protection  
- Suitable for automotive applications (AEC-Q101 qualified)  

### **Package:**  
- **TO-263 (D2PAK)**  

This information is based on STMicroelectronics' datasheet for the VNP28N04. For detailed application notes and reliability data, refer to the official documentation.

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