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VNP10N07FI from ST,ST Microelectronics

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VNP10N07FI

Manufacturer: ST

鯫MNIFET? FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP10N07FI ST 33 In Stock

Description and Introduction

鯫MNIFET? FULLY AUTOPROTECTED POWER MOSFET The VNP10N07FI is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 70V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-State Resistance (RDS(on)):** 0.1Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Input Capacitance (Ciss):** 500pF (typ)  
- **Output Capacitance (Coss):** 150pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 30ns (typ)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The VNP10N07FI is an N-channel vertical power MOSFET designed for high-efficiency switching applications. It is optimized for low on-state resistance and fast switching performance, making it suitable for automotive and industrial applications.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Improves efficiency in high-frequency applications.  
- **Avalanche Energy Specified:** Enhances ruggedness in harsh conditions.  
- **ESD Protection:** Improved reliability against electrostatic discharge.  
- **Fully Characterized for Linear Mode Operation:** Ensures stable performance in linear applications.  
- **Automotive Qualified:** Compliant with AEC-Q101 standards.  

This information is based on the manufacturer's datasheet and technical documentation.

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