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VNP10N07 from ST,ST Microelectronics

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VNP10N07

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP10N07 ST 3200 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The VNP10N07 is a power MOSFET manufactured by STMicroelectronics.  

**Specifications:**  
- **Drain-Source Voltage (VDSS):** 70V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.1Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  

**Descriptions and Features:**  
- N-channel enhancement-mode vertical DMOS transistor  
- Designed for high-efficiency switching applications  
- Low gate charge for fast switching  
- Avalanche ruggedness  
- Improved dv/dt capability  
- Logic-level compatible gate drive  
- Suitable for automotive and industrial applications  

The device is commonly used in power management, motor control, and switching circuits.

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