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VNP10N06 from ST,ST Microelectronics

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VNP10N06

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP10N06 ST 3 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The VNP10N06 is a power MOSFET manufactured by STMicroelectronics. Here are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.1Ω (typical) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (typical)  
- **Input Capacitance (Ciss):** 600pF (typical)  
- **Output Capacitance (Coss):** 200pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The VNP10N06 is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for automotive, industrial, and power management applications.  

### **Features:**  
- **Low On-Resistance (RDS(on))** for reduced conduction losses  
- **Fast Switching Performance**  
- **Avalanche Energy Specified**  
- **ESD Protection**  
- **Fully Characterized for Linear Mode Operation**  
- **TO-220 Package**  

This information is based solely on the manufacturer's datasheet.

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