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VNP10N06-E from ST,ST Microelectronics

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VNP10N06-E

Manufacturer: ST

OMINFET: FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNP10N06-E,VNP10N06E ST 1280 In Stock

Description and Introduction

OMINFET: FULLY AUTOPROTECTED POWER MOSFET The VNP10N06-E is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.1Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **Input Capacitance (Ciss):** 600pF (typ)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Descriptions:**  
- The VNP10N06-E is an N-channel vertical power MOSFET designed for high-efficiency switching applications.  
- It is housed in a TO-220 package, providing good thermal performance.  
- Suitable for automotive and industrial applications due to its ruggedness and reliability.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Rugged:** Capable of withstanding high-energy transients.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control circuits.  
- **ESD Protection:** Improved robustness against electrostatic discharge.  

This information is based on STMicroelectronics' official datasheet for the VNP10N06-E.

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