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VNN7NV04 from STM,ST Microelectronics

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VNN7NV04

Manufacturer: STM

"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNN7NV04 STM 23 In Stock

Description and Introduction

"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET The part **VNN7NV04** is manufactured by **STMicroelectronics (STM)**. Here are the specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Description:**  
The **VNN7NV04** is a **dual-channel, high-side driver** designed for automotive applications. It integrates two independent high-side switches with protection features, making it suitable for driving resistive, inductive, or capacitive loads.

### **Key Features:**  
- **Dual-Channel High-Side Driver**  
- **Operating Voltage Range:** 4.5V to 28V  
- **Output Current:** Up to 7A per channel (with appropriate heat dissipation)  
- **Low On-Resistance (RDS(on)):** Typically 40mΩ per channel  
- **Protection Features:**  
  - Overcurrent protection  
  - Thermal shutdown  
  - Reverse battery protection (up to -40V)  
  - Load current limitation  
  - Undervoltage lockout (UVLO)  
- **Diagnostic Feedback:** Open-load detection, short-to-ground, and short-to-battery detection  
- **AEC-Q100 Qualified** (for automotive applications)  
- **Package:** PowerSSO-12  

### **Applications:**  
- Automotive body control modules  
- Power distribution systems  
- LED lighting control  
- Relay and solenoid drivers  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Partnumber Manufacturer Quantity Availability
VNN7NV04 ST 1405 In Stock

Description and Introduction

"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET Here are the factual details about the part **VNN7NV04** from the manufacturer **STMicroelectronics (ST)**:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Part Number:**  
VNN7NV04  

### **Specifications:**  
- **Type:** Dual N-channel MOSFET  
- **Technology:** VIPower™ M0-7  
- **Drain-Source Voltage (VDS):** 40 V  
- **Continuous Drain Current (ID):** 7 A  
- **RDS(on) (Max):** 0.04 Ω (typical at VGS = 10 V)  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (PD):** 30 W  
- **Operating Temperature Range:** -40°C to +150°C  
- **Package:** PowerSSO-12  

### **Descriptions:**  
The VNN7NV04 is a dual N-channel MOSFET designed using ST's VIPower™ M0-7 technology, optimized for high-efficiency power switching applications. It features low on-resistance and high current capability, making it suitable for automotive and industrial applications.  

### **Features:**  
- Dual N-channel MOSFET in a single package  
- Low RDS(on) for reduced conduction losses  
- High current handling capability  
- Avalanche ruggedness  
- ESD protection  
- AEC-Q101 qualified (for automotive applications)  
- Lead-free and RoHS compliant  

This information is sourced from STMicroelectronics' official documentation. Let me know if you need further details.

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