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VNN3NV04 from ST,ST Microelectronics

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VNN3NV04

Manufacturer: ST

"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNN3NV04 ST 935 In Stock

Description and Introduction

"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET The part **VNN3NV04** is manufactured by **STMicroelectronics (ST)**.  

### **Specifications:**  
- **Type:** High-side driver  
- **Output Configuration:** High-side  
- **Output Type:** N-Channel  
- **Voltage - Supply (Vcc/Vdd):** 5V to 36V  
- **On-State Resistance (Rds On):** 0.3Ω (typical)  
- **Current - Output (Max):** 3A  
- **Operating Temperature:** -40°C to 150°C  
- **Package/Case:** PowerSSO-12  

### **Descriptions:**  
The **VNN3NV04** is a **3A high-side driver** designed for automotive and industrial applications. It integrates an **N-channel power MOSFET** with protection features, making it suitable for driving resistive, inductive, or capacitive loads.  

### **Features:**  
- **3A continuous current capability**  
- **Low Rds(on) for reduced power dissipation**  
- **Undervoltage lockout (UVLO) protection**  
- **Overcurrent protection (OCP)**  
- **Thermal shutdown**  
- **Reverse battery protection (-40V)**  
- **ESD protection**  
- **Automotive-grade reliability (AEC-Q100 qualified)**  

This device is commonly used in **automotive systems, relay replacements, and power distribution modules**.  

Would you like any additional details?

Partnumber Manufacturer Quantity Availability
VNN3NV04 ST 2126 In Stock

Description and Introduction

"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET The part **VNN3NV04** is manufactured by **STMicroelectronics (ST)**. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Type:** Dual N-channel 30 V, 0.03 Ω standard level MOSFET  
- **Drain-Source Voltage (VDS):** 30 V  
- **Continuous Drain Current (ID):** 5.5 A  
- **RDS(on) (Max):** 30 mΩ at VGS = 10 V  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (Ptot):** 2.5 W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerSSO-12  

### **Description:**  
The **VNN3NV04** is a dual N-channel MOSFET designed for low-voltage, high-efficiency switching applications. It is optimized for standard logic-level drive and offers low on-resistance for reduced power losses.  

### **Features:**  
- **Low RDS(on)** for improved efficiency  
- **Standard threshold voltage** for compatibility with logic-level drive  
- **AEC-Q101 qualified** for automotive applications  
- **ESD protection** for robustness  
- **Suitable for power management** in DC-DC converters, motor control, and load switching  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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