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VNK10N06 from ST,ST Microelectronics

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VNK10N06

Manufacturer: ST

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNK10N06 ST 2000 In Stock

Description and Introduction

OMNIFET FULLY AUTOPROTECTED POWER MOSFET The VNK10N06 is a power MOSFET manufactured by STMicroelectronics (ST). Here are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Part Number:**  
VNK10N06  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.1Ω (max) at VGS = 10V  

### **Features:**  
- **Low On-Resistance:** Ensures minimal power loss.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load applications.  
- **Logic-Level Gate Drive:** Can be driven by standard logic circuits.  
- **ESD Protection:** Improved reliability against electrostatic discharge.  

### **Package:**  
TO-220 (Through-Hole)  

### **Applications:**  
- Power switching  
- DC-DC converters  
- Motor control  
- Automotive systems  

This information is based on STMicroelectronics' datasheet for the VNK10N06. For detailed electrical characteristics, refer to the official documentation.

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