IC Phoenix logo

Home ›  V  › V4 > VND7N04TR-E

VND7N04TR-E from ST,ST Microelectronics

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

15.625ms

VND7N04TR-E

Manufacturer: ST

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VND7N04TR-E,VND7N04TRE ST 800 In Stock

Description and Introduction

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET The **VND7N04TR-E** is a power MOSFET manufactured by **STMicroelectronics (ST)**. Below are the factual details about this component:

### **Manufacturer:**  
- **STMicroelectronics (ST)**

### **Specifications:**  
- **Type:** Dual N-channel MOSFET  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 7A per channel  
- **RDS(on) (Max):** 0.1Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2W per channel  
- **Package:** **PowerSO-10** (Exposed Pad)  

### **Descriptions:**  
- The **VND7N04TR-E** is a **dual N-channel enhancement-mode power MOSFET** in a **PowerSO-10 package**.  
- It is designed for **high-efficiency switching applications** in automotive and industrial systems.  
- Features **low on-resistance** and **high current capability** for power management.  

### **Features:**  
- **Dual N-channel MOSFET** in a single package  
- **Low RDS(on)** for reduced conduction losses  
- **AEC-Q101 qualified** (suitable for automotive applications)  
- **ESD protection** for robustness  
- **Exposed thermal pad** for improved heat dissipation  
- **Logic-level compatible** gate drive  

This information is based on STMicroelectronics' official datasheet for the **VND7N04TR-E**.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips