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VND10N06TR-E from ST,ST Microelectronics

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VND10N06TR-E

Manufacturer: ST

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VND10N06TR-E,VND10N06TRE ST 439 In Stock

Description and Introduction

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET The VND10N06TR-E is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual details about this component:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Specifications:**  
- **Type:** Dual N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 10A per channel  
- **RDS(on)GS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 30W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** PowerSSO-12  

### **Descriptions:**  
The VND10N06TR-E is a dual N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching characteristics, making it suitable for automotive and industrial applications.  

### **Features:**  
- **Dual N-Channel Configuration**  
- **Low On-Resistance (RDS(on))**  
- **Fast Switching Speed**  
- **ESD Protection**  
- **AEC-Q101 Qualified (for automotive applications)**  
- **Logic-Level Gate Drive Compatibility**  
- **Thermal Shutdown and Overcurrent Protection (if applicable in the variant)**  

This information is based solely on the manufacturer's datasheet and technical documentation.

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