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VND10N06-E from ST,ST Microelectronics

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VND10N06-E

Manufacturer: ST

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VND10N06-E,VND10N06E ST 55 In Stock

Description and Introduction

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET The VND10N06-E is a power MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Type:** N-channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 10A  
- **RDS(on) (Max):** 0.1Ω (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 40W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- The VND10N06-E is a high-performance N-channel MOSFET designed for power switching applications.  
- It features low on-resistance and high current capability, making it suitable for automotive and industrial applications.  

### **Features:**  
- Low threshold drive  
- Fast switching speed  
- Avalanche ruggedness  
- ESD protection  
- Logic-level compatible gate drive  
- Pb-free and RoHS compliant  

This information is based on the manufacturer's datasheet and technical documentation.

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