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VND10N06-1 from ST,ST Microelectronics

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VND10N06-1

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VND10N06-1,VND10N061 ST 10000 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The VND10N06-1 is a double monolithic high-side driver manufactured by STMicroelectronics.  

### **Specifications:**  
- **Output Configuration:** High Side  
- **Output Type:** N-Channel  
- **Voltage - Supply (Vcc/Vdd):** 5.5V to 36V  
- **On-State Resistance (RDS(on)):** 0.1Ω (typical)  
- **Current - Output (Max):** 10A  
- **Operating Temperature:** -40°C to 150°C  
- **Protection Features:** Overcurrent, Overtemperature, Undervoltage Lockout (UVLO)  
- **Mounting Type:** Through Hole  
- **Package / Case:** Multiwatt-11  

### **Descriptions:**  
The VND10N06-1 is designed for automotive and industrial applications, providing robust protection features and high current handling. It integrates two independent N-channel power MOSFETs with a common drain configuration.  

### **Features:**  
- **Dual High-Side Driver**  
- **Very Low Standby Current**  
- **CMOS-Compatible Inputs**  
- **ESD Protection**  
- **Fault Feedback Output**  
- **Optimized for Inductive Loads**  

For detailed electrical characteristics and application notes, refer to the official STMicroelectronics datasheet.

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