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VND10N06-1-E from ST,ST Microelectronics

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VND10N06-1-E

Manufacturer: ST

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VND10N06-1-E,VND10N061E ST 2000 In Stock

Description and Introduction

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET The VND10N06-1-E is a power MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 10A  
- **On-Resistance (RDS(on)):** 0.1Ω (typical)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 40W  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- Designed for high-efficiency switching applications.  
- Suitable for automotive and industrial applications.  
- Features low on-resistance for reduced power losses.  

### **Features:**  
- **Avalanche ruggedness** for enhanced reliability.  
- **Fast switching speed** for high-frequency applications.  
- **ESD protection** for improved robustness.  
- **Logic-level compatible gate drive** (can be driven by 5V signals).  
- **Fully lead-free and RoHS compliant.**  

This information is based solely on STMicroelectronics' datasheet for the VND10N06-1-E.

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