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VNB49N04 from ST,ST Microelectronics

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VNB49N04

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNB49N04 ST 429 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The VNB49N04 is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** STMicroelectronics (ST)  
- **Part Number:** VNB49N04  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 49A  
- **Pulsed Drain Current (IDM):** 196A  
- **RDS(ON) (Max) @ VGS = 10V:** 9.5mΩ  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** PowerSSO-12  

### **Descriptions:**
- The VNB49N04 is a high-current N-channel MOSFET designed for power switching applications.  
- It features low on-resistance (RDS(ON)) for efficient power handling.  
- Suitable for automotive and industrial applications due to its robustness and high current capability.  

### **Features:**
- **Low RDS(ON):** Enhances efficiency in power conversion.  
- **High Current Handling:** Supports up to 49A continuous current.  
- **Avalanche Energy Specified:** Ensures reliability in harsh conditions.  
- **Optimized for High-Speed Switching:** Suitable for PWM and motor control applications.  
- **Automotive Grade:** Compliant with AEC-Q101 standards for automotive applications.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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