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VNB28N04 from ST,ST Microelectronics

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VNB28N04

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNB28N04 ST 1500 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The **VNB28N04** is a power MOSFET manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 28A  
- **Pulsed Drain Current (IDM):** 112A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 28mΩ (at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (typical)  
- **Input Capacitance (Ciss):** 1200pF  
- **Output Capacitance (Coss):** 500pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Rise Time (tr):** 30ns  
- **Turn-Off Delay Time (td(off)):** 40ns  
- **Fall Time (tf):** 20ns  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**
The **VNB28N04** is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in automotive, industrial, and consumer electronics.

### **Features:**
- **Low On-Resistance (RDS(on))** for reduced conduction losses  
- **Fast Switching Performance** for high-frequency applications  
- **Avalanche Energy Rated** for ruggedness in harsh conditions  
- **Low Gate Charge** for improved efficiency  
- **Fully Characterized for Linear Mode Operation**  
- **Pb-Free and RoHS Compliant**  

This information is based on STMicroelectronics' datasheet for the **VNB28N04**. For detailed application notes and reliability data, refer to the official documentation.

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