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VNB14NV04TR-E from ST,ST Microelectronics

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VNB14NV04TR-E

Manufacturer: ST

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNB14NV04TR-E,VNB14NV04TRE ST 650 In Stock

Description and Introduction

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET The **VNB14NV04TR-E** is a power MOSFET manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** STMicroelectronics (ST)  
### **Part Number:** VNB14NV04TR-E  

### **Key Specifications:**  
- **Technology:** Vertical Power MOSFET  
- **Channel Type:** N-Channel  
- **Drain-Source Voltage (VDSS):** 40V  
- **Continuous Drain Current (ID):** 14A  
- **Pulsed Drain Current (IDM):** 56A  
- **RDS(on) (Max):** 0.04Ω @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 45W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** PowerSSO-12  

### **Features:**  
- Low on-resistance (RDS(on))  
- High current capability  
- Fast switching performance  
- Avalanche ruggedness  
- Integrated freewheeling diode for inductive load protection  
- Logic-level gate drive compatibility  

### **Applications:**  
- Automotive systems  
- Motor control  
- Power management  
- DC-DC converters  
- Load switching  

This information is based solely on the manufacturer's datasheet. For detailed electrical characteristics and application notes, refer to the official STMicroelectronics documentation.

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