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VNB14NV04-E from ST,ST Microelectronics

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VNB14NV04-E

Manufacturer: ST

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNB14NV04-E,VNB14NV04E ST 850 In Stock

Description and Introduction

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET The part **VNB14NV04-E** is manufactured by **STMicroelectronics (ST)**. Below are the specifications, descriptions, and features based on the available knowledge:

### **Specifications:**
- **Type:** Power MOSFET  
- **Technology:** Vertical DMOS  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 14A  
- **Pulsed Drain Current (IDM):** 56A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 40mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 35W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** PowerSSO-12  

### **Description:**  
The **VNB14NV04-E** is a **single N-channel vertical power MOSFET** designed for high-efficiency power switching applications. It is optimized for low on-resistance and fast switching performance, making it suitable for automotive and industrial applications.

### **Features:**  
- **Low on-resistance (RDS(on))** for reduced conduction losses  
- **High current capability** (14A continuous, 56A pulsed)  
- **Avalanche ruggedness** for improved reliability  
- **Optimized for 12V automotive systems**  
- **Fully characterized for thermal performance**  
- **Lead-free and RoHS compliant**  

For detailed electrical characteristics and application notes, refer to the official **STMicroelectronics datasheet**.

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