"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The **VNB14N04** is a power MOSFET manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics (ST)
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDS):** 40V
- **Continuous Drain Current (ID):** 14A
- **Pulsed Drain Current (IDM):** 56A
- **Power Dissipation (PD):** 45W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.04Ω (max) @ VGS = 10V
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)
- **Input Capacitance (Ciss):** 1000pF (typ)
- **Output Capacitance (Coss):** 300pF (typ)
- **Reverse Transfer Capacitance (Crss):** 100pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 30ns (typ)
- **Operating Temperature Range:** -55°C to +175°C
### **Descriptions:**
- The **VNB14N04** is a **N-channel enhancement-mode vertical DMOS FET** designed for high-efficiency power switching applications.
- It is optimized for **low on-resistance** and **fast switching performance**, making it suitable for **DC-DC converters, motor control, and power management circuits**.
- The device is housed in a **TO-220 package**, providing good thermal performance.
### **Features:**
- **Low gate charge** for improved switching efficiency.
- **Avalanche ruggedness** for enhanced reliability.
- **Low threshold voltage** for compatibility with logic-level drive circuits.
- **Fast switching speed** to minimize switching losses.
- **High current capability** for power applications.
This information is based on the manufacturer's datasheet and technical documentation. For detailed application notes, refer to STMicroelectronics' official resources.
