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VNB10N07TR-E from ST,ST Microelectronics

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VNB10N07TR-E

Manufacturer: ST

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNB10N07TR-E,VNB10N07TRE ST 900 In Stock

Description and Introduction

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET The VNB10N07TR-E is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** STMicroelectronics (ST)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 70V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.07Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Input Capacitance (Ciss):** 500pF (typ)  
- **Output Capacitance (Coss):** 150pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 30ns (typ)  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-263 (D2PAK)  

### **Descriptions:**  
- The VNB10N07TR-E is a high-performance N-channel MOSFET designed for power switching applications.  
- It features low on-resistance and fast switching characteristics, making it suitable for high-efficiency power conversion.  
- The device is optimized for automotive and industrial applications requiring robust performance.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- High current capability (10A continuous, 40A pulsed).  
- Fast switching speed for improved efficiency.  
- Avalanche ruggedness for enhanced reliability.  
- Lead-free and RoHS compliant.  
- Suitable for automotive applications (AEC-Q101 qualified).  

This information is based on STMicroelectronics' official datasheet for the VNB10N07TR-E.

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