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VNB10N07 from ST,ST Microelectronics

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VNB10N07

Manufacturer: ST

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET

Partnumber Manufacturer Quantity Availability
VNB10N07 ST 690 In Stock

Description and Introduction

"OMNIFET" FULLY AUTOPROTECTED POWER MOSFET The VNB10N07 is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Part Number:**  
VNB10N07  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 70V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.1Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Input Capacitance (Ciss):** 600pF (typ)  
- **Output Capacitance (Coss):** 200pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  

### **Package:**  
TO-220 (Through-Hole)  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching performance  
- Improved avalanche ruggedness  
- High current handling capability  
- Suitable for power management applications  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power switching circuits  
- Automotive systems  

This information is based on the manufacturer's datasheet and technical documentation.

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