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VN820PT13TR from ST,ST Microelectronics

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VN820PT13TR

Manufacturer: ST

HIGH SIDE DRIVER

Partnumber Manufacturer Quantity Availability
VN820PT13TR ST 10000 In Stock

Description and Introduction

HIGH SIDE DRIVER The **VN820PT13TR** is a power MOSFET manufactured by **STMicroelectronics (ST)**. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Specifications:**  
- **Type:** Power MOSFET  
- **Technology:** VIPower™ M0-9  
- **Drain-Source Voltage (VDS):** 40V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **RDS(ON) (Max):** 13mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 50W  
- **Operating Temperature Range:** -40°C to +150°C  
- **Package:** PowerSSO-12  

### **Descriptions:**  
- The **VN820PT13TR** is a high-side driver with embedded power MOSFET, designed for automotive and industrial applications.  
- It integrates protection features such as thermal shutdown, overcurrent protection, and undervoltage lockout (UVLO).  
- The device is optimized for low power dissipation and high efficiency in switching applications.  

### **Features:**  
- **Low on-resistance (RDS(ON))** for reduced conduction losses.  
- **Fast switching capability** for high-frequency applications.  
- **Integrated protection functions** (thermal shutdown, overcurrent, and UVLO).  
- **AEC-Q101 qualified** for automotive applications.  
- **Optimized for 12V automotive systems.**  

This information is based solely on the manufacturer's datasheet and technical documentation.

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