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VN0610L from VISHA,Vishay

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VN0610L

Manufacturer: VISHA

Enhancement-Mode MOSFET Transistors

Partnumber Manufacturer Quantity Availability
VN0610L VISHA 5000 In Stock

Description and Introduction

Enhancement-Mode MOSFET Transistors **Part Number:** VN0610L  
**Manufacturer:** VISHA  

### **Specifications:**  
- **Type:** N-Channel Enhancement Mode MOSFET  
- **Drain-Source Voltage (VDS):** 60V  
- **Continuous Drain Current (ID):** 6A  
- **Pulsed Drain Current (IDM):** 24A  
- **Power Dissipation (PD):** 20W  
- **Gate-Source Voltage (VGS):** ±20V  
- **Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **On-Resistance (RDS(on)):** 0.25Ω (max) @ VGS = 10V  
- **Input Capacitance (Ciss):** 300pF (typ)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The VN0610L is a power MOSFET designed for high-efficiency switching applications.  
- It features low on-resistance and fast switching speeds, making it suitable for power management in various circuits.  

### **Features:**  
- **Low On-Resistance:** Enhances power efficiency.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Enhanced Ruggedness:** Improved avalanche energy capability.  
- **Logic-Level Gate Drive:** Compatible with 5V drive signals.  
- **TO-220 Package:** Provides good thermal performance.  

(Source: VISHA datasheet)

Application Scenarios & Design Considerations

Enhancement-Mode MOSFET Transistors
Partnumber Manufacturer Quantity Availability
VN0610L SI 5000 In Stock

Description and Introduction

Enhancement-Mode MOSFET Transistors **Part VN0610L Manufacturer SI Specifications, Descriptions, and Features:**  

- **Manufacturer:** Vishay Siliconix (SI)  
- **Part Number:** VN0610L  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 60V  
- **Current Rating (ID):** 0.7A (continuous)  
- **Power Dissipation (PD):** 1.4W  
- **On-Resistance (RDS(on)):** 5Ω (max) at VGS = 10V  
- **Gate Threshold Voltage (VGS(th)):** 1V to 2.5V  
- **Package:** SOT-23 (Surface Mount)  
- **Features:**  
  - Low gate charge  
  - Fast switching speed  
  - ESD protection  
  - Logic-level compatible gate drive  
  - RoHS compliant  

This MOSFET is designed for low-power switching applications, such as load switching and signal amplification in portable electronics.  

(Source: Vishay Siliconix datasheet for VN0610L)

Application Scenarios & Design Considerations

Enhancement-Mode MOSFET Transistors
Partnumber Manufacturer Quantity Availability
VN0610L 1000 In Stock

Description and Introduction

Enhancement-Mode MOSFET Transistors Here are the factual details about part **VN0610L** from Ic-phoenix technical data files:

### **Manufacturer Specifications:**
- **Manufacturer:** STMicroelectronics  
- **Part Number:** VN0610L  
- **Type:** Low-side driver IC  
- **Technology:** Power MOSFET  

### **Descriptions:**
- The **VN0610L** is a monolithic device designed for automotive and industrial applications.  
- It integrates a **power MOSFET** with a **charge pump** and protection features.  
- Suitable for **low-side switching** in resistive, inductive, and capacitive loads.  

### **Features:**
- **Voltage Rating:** 60V  
- **Current Handling:** Up to 10A  
- **On-State Resistance (RDS(on)):** 0.06Ω (typical)  
- **Logic-Level Input:** Compatible with 3.3V and 5V microcontrollers  
- **Protection Features:**  
  - Over-temperature shutdown  
  - Short-circuit protection  
  - Undervoltage lockout (UVLO)  
- **Package:** PowerSO-10 (Exposed Pad for thermal dissipation)  
- **Operating Temperature Range:** -40°C to +150°C  

This information is based solely on the manufacturer's datasheet and technical documentation. Let me know if you need further details.

Application Scenarios & Design Considerations

Enhancement-Mode MOSFET Transistors

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