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V40100PGW from VISHAY

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V40100PGW

Manufacturer: VISHAY

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Partnumber Manufacturer Quantity Availability
V40100PGW VISHAY 17 In Stock

Description and Introduction

Dual High-Voltage Trench MOS Barrier Schottky Rectifier The part **V40100PGW** is manufactured by **VISHAY**.  

### **Specifications:**  
- **Type:** Power MOSFET  
- **Technology:** N-Channel  
- **Voltage Rating (VDSS):** 100V  
- **Current Rating (ID):** 40A  
- **Power Dissipation (PD):** 125W  
- **Package:** TO-247  
- **RDS(ON) (Max):** 0.045Ω @ 10V  
- **Gate Threshold Voltage (VGS(th)):** 2V to 4V  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions and Features:**  
- **High Efficiency:** Low on-resistance (RDS(ON)) for reduced conduction losses.  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Robust Design:** TO-247 package ensures high power handling and thermal performance.  
- **Avalanche Rated:** Capable of handling high-energy pulses.  
- **Applications:** Used in power supplies, motor control, and DC-DC converters.  

This information is based on VISHAY's datasheet for the **V40100PGW** MOSFET.

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