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V40100PG from VISHAY

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V40100PG

Manufacturer: VISHAY

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Partnumber Manufacturer Quantity Availability
V40100PG VISHAY 1000 In Stock

Description and Introduction

Dual High-Voltage Trench MOS Barrier Schottky Rectifier **Part V40100PG Manufacturer: VISHAY**  

### **Specifications:**  
- **Category:** Power MOSFET  
- **Technology:** N-Channel  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 40A  
- **Pulsed Drain Current (IDM):** 160A  
- **Power Dissipation (PD):** 125W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.04Ω (max) at VGS = 10V  
- **Package:** TO-220AB (Through-Hole)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions:**  
The **V40100PG** is an N-Channel power MOSFET from Vishay, designed for high-efficiency switching applications. It offers low on-resistance and high current handling, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low gate charge for fast switching  
- High current capability  
- Low thermal resistance  
- Avalanche energy rated  
- Lead (Pb)-free and RoHS compliant  

For detailed datasheet information, refer to Vishay's official documentation.

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