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V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Partnumber Manufacturer Quantity Availability
V30120C 62 In Stock

Description and Introduction

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A The part **V30120C** is a **thyristor (SCR)** manufactured by **STMicroelectronics**.  

### **Manufacturer Specifications:**  
- **Voltage - Off State (Vdrm):** 1200V  
- **Current - On State (It RMS):** 30A  
- **Current - Non-Repetitive Surge (Ifsm):** 300A  
- **Current - Gate Trigger (Igt):** 30mA  
- **Voltage - Gate Trigger (Vgt):** 1.5V  
- **Power Dissipation (Pd):** 100W  
- **Operating Temperature:** -40°C to +125°C  
- **Package / Case:** TO-220-3  

### **Descriptions and Features:**  
- **Type:** Standard Recovery Thyristor (SCR)  
- **Mounting Type:** Through Hole  
- **Termination Style:** PC Pin  
- **Repetitive Peak Reverse Voltage (Vrrm):** 1200V  
- **Holding Current (Ih):** 30mA  
- **Critical Rate of Rise of Off-State Voltage (dv/dt):** 1000V/µs  
- **Applications:** Power switching, motor control, industrial systems  

This part is designed for high-power switching applications with robust performance in harsh environments.  

(Source: STMicroelectronics datasheet)

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