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V20120SG from VISHAY

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V20120SG

Manufacturer: VISHAY

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Partnumber Manufacturer Quantity Availability
V20120SG VISHAY 15 In Stock

Description and Introduction

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A **Part Number:** V20120SG  
**Manufacturer:** VISHAY  

### **Specifications:**  
- **Type:** Schottky Rectifier Diode  
- **Voltage Rating (VRRM):** 120 V  
- **Average Forward Current (IF(AV)):** 20 A  
- **Peak Forward Surge Current (IFSM):** 200 A (non-repetitive)  
- **Forward Voltage Drop (VF):** 0.85 V (typical at 10 A)  
- **Reverse Leakage Current (IR):** 0.5 mA (typical at 120 V)  
- **Operating Temperature Range:** -65 °C to +175 °C  
- **Package:** TO-247AC (3-pin)  

### **Descriptions & Features:**  
- High-efficiency Schottky barrier rectifier  
- Low forward voltage drop for reduced power loss  
- High current capability  
- Guard ring for enhanced ruggedness and reliability  
- Epitaxial construction for improved performance  
- Lead (Pb)-free and RoHS compliant  
- Suitable for high-frequency switching applications  

This diode is commonly used in power supplies, inverters, and DC-DC converters.

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