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UPG2214TK-E2-A from RENESAS

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16.113ms

UPG2214TK-E2-A

Manufacturer: RENESAS

1/2W low voltage L,S-band SPDT switch.

Partnumber Manufacturer Quantity Availability
UPG2214TK-E2-A,UPG2214TKE2A RENESAS 26 In Stock

Description and Introduction

1/2W low voltage L,S-band SPDT switch. **Manufacturer:** Renesas  

**Part Number:** UPG2214TK-E2-A  

**Specifications:**  
- **Type:** Dual SPDT (Single Pole Double Throw) Analog Switch  
- **Voltage Supply Range:** ±4.5V to ±20V (Dual Supply), +9V to +40V (Single Supply)  
- **On-Resistance (Typical):** 45Ω (at ±15V supply)  
- **Low Leakage Current:** 1nA (max)  
- **Fast Switching Time:** tON = 300ns (max), tOFF = 200ns (max)  
- **Package:** TSSOP-16  

**Descriptions:**  
The UPG2214TK-E2-A is a high-performance dual SPDT analog switch designed for precision signal routing in industrial, audio, and instrumentation applications. It offers low on-resistance and high-speed switching with minimal distortion.  

**Features:**  
- Wide operating voltage range  
- Low power consumption  
- Break-before-make switching  
- High noise immunity  
- ESD protection  
- Pb-free and RoHS compliant  

(Source: Renesas datasheet)

Partnumber Manufacturer Quantity Availability
UPG2214TK-E2-A,UPG2214TKE2A NEC 9125 In Stock

Description and Introduction

1/2W low voltage L,S-band SPDT switch. The UPG2214TK-E2-A is a dual P-channel MOSFET manufactured by NEC. Below are the specifications, descriptions, and features based on factual information:

### **Manufacturer:** NEC (Now part of Renesas Electronics)  

### **Specifications:**  
- **Type:** Dual P-Channel MOSFET  
- **Maximum Drain-Source Voltage (VDSS):** -30V  
- **Maximum Gate-Source Voltage (VGS):** ±20V  
- **Drain Current (ID):** -4.5A (per channel)  
- **Power Dissipation (PD):** 1.5W (per channel)  
- **On-Resistance (RDS(on)):** 0.15Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1.0V to -2.5V  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Package:** SOP-8 (Small Outline Package)  

### **Descriptions & Features:**  
- Designed for high-efficiency power management applications.  
- Low on-resistance for reduced power loss.  
- Fast switching performance.  
- Suitable for battery protection, load switching, and power distribution circuits.  
- Built-in ESD protection for improved reliability.  
- Dual MOSFET configuration in a single package for space-saving designs.  

For exact performance characteristics, refer to the official datasheet from NEC/Renesas.

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