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UPC8119T-E3 from NEC

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UPC8119T-E3

Manufacturer: NEC

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

Partnumber Manufacturer Quantity Availability
UPC8119T-E3,UPC8119TE3 NEC 195 In Stock

Description and Introduction

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE The part **UPC8119T-E3** is a **Silicon N-Channel MOS FET** manufactured by **NEC**.  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Drain Current (ID):** 5A  
- **Power Dissipation (PD):** 25W  
- **On-Resistance (RDS(on)):** 0.05Ω (max)  
- **Package:** TO-220AB  

### **Features:**  
- Low on-resistance  
- High-speed switching  
- Low gate drive power  
- Suitable for power switching applications  

This MOSFET is commonly used in power management, DC-DC converters, and motor control circuits.  

(Note: The manufacturer **NEC** is now part of **Renesas Electronics Corporation** due to mergers and acquisitions.)

Partnumber Manufacturer Quantity Availability
UPC8119T-E3,UPC8119TE3 700 In Stock

Description and Introduction

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE The part **UPC8119T-E3** is a **GaAs MMIC SPDT Switch** manufactured by **Renesas Electronics Corporation**.  

### **Specifications:**  
- **Type:** GaAs MMIC SPDT (Single Pole Double Throw) Switch  
- **Frequency Range:** DC to 3 GHz  
- **Insertion Loss:** 0.5 dB (typical) at 2 GHz  
- **Isolation:** 30 dB (typical) at 2 GHz  
- **Input Power Handling:** 30 dBm (typical)  
- **Control Voltage:** 0/+3 V or +3/0 V  
- **Package:** SOT-363 (6-pin)  

### **Description:**  
The UPC8119T-E3 is a high-performance GaAs MMIC switch designed for RF applications requiring low insertion loss and high isolation. It is suitable for wireless communication systems, including cellular, Wi-Fi, and other high-frequency applications.  

### **Features:**  
- **Low Insertion Loss:** 0.5 dB typical at 2 GHz  
- **High Isolation:** 30 dB typical at 2 GHz  
- **High Power Handling:** Up to 30 dBm  
- **Single Positive Control Voltage:** Compatible with 0/+3 V or +3/0 V logic  
- **Small Package:** SOT-363 (6-pin) for space-constrained designs  
- **RoHS Compliant:** Lead-free and environmentally friendly  

This information is based on the manufacturer's datasheet and technical documentation.

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