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UPC2726T-E3 from NEC

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16.113ms

UPC2726T-E3

Manufacturer: NEC

1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

Partnumber Manufacturer Quantity Availability
UPC2726T-E3,UPC2726TE3 NEC 2785 In Stock

Description and Introduction

1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT **Part Number:** UPC2726T-E3  
**Manufacturer:** NEC  

### **Specifications:**  
- **Type:** RF Transistor  
- **Application:** High-frequency amplification  
- **Package:** SOT-89  
- **Polarity:** NPN  
- **Maximum Power Dissipation (Pd):** 1.5 W  
- **Collector-Base Voltage (VCBO):** 20 V  
- **Collector-Emitter Voltage (VCEO):** 12 V  
- **Emitter-Base Voltage (VEBO):** 3 V  
- **Collector Current (IC):** 1 A  
- **Transition Frequency (fT):** 7 GHz  
- **Noise Figure (NF):** 1.5 dB (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- Designed for high-frequency applications such as RF amplifiers.  
- Low noise figure for improved signal integrity.  
- High transition frequency suitable for microwave and RF circuits.  
- Compact SOT-89 package for space-constrained designs.  
- NPN bipolar junction transistor (BJT) structure.  
- Commonly used in wireless communication, satellite, and radar systems.  

(Note: This part may be discontinued or replaced by newer models. Verify availability with the manufacturer or authorized distributors.)

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