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UPC1679G-E2 from NEC

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UPC1679G-E2

Manufacturer: NEC

5 V-BIAS, +5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

Partnumber Manufacturer Quantity Availability
UPC1679G-E2,UPC1679GE2 NEC 5000 In Stock

Description and Introduction

5 V-BIAS, +5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER **Part UPC1679G-E2 Manufacturer: NEC**  

- **Specifications:**  
  - **Type:** RF Power Transistor  
  - **Material:** Silicon (Si)  
  - **Polarity:** NPN  
  - **Maximum Power Dissipation (Pd):** 15W  
  - **Collector-Base Voltage (VCBO):** 30V  
  - **Collector-Emitter Voltage (VCEO):** 15V  
  - **Emitter-Base Voltage (VEBO):** 4V  
  - **Collector Current (IC):** 1.5A  
  - **Transition Frequency (fT):** 1.5GHz  
  - **Gain (hFE):** 20-200 (depending on operating conditions)  
  - **Package Type:** TO-220  

- **Descriptions:**  
  - Designed for RF power amplification in VHF/UHF applications.  
  - Suitable for linear and switching applications.  
  - High transition frequency for improved high-frequency performance.  

- **Features:**  
  - High power gain and efficiency.  
  - Robust construction for reliable performance.  
  - Low distortion characteristics for amplification applications.  
  - Suitable for industrial and communication equipment.  

(Note: Always verify datasheets for precise application details.)

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